6
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
ηD
PARC (dB)
IRL, INPUT RETURN LOSS (dB)
960
15
23
800
?2.5
36
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 58 Watts Avg.
VDD
= 28 Vdc, P
out
= 58 W (Avg.)
IDQ
= 1400 mA, Single?Carrier
W?CDMA, 3.84 MHz, Channel
Bandwidth, Input PAR = 7.5 dB
@ 0.01% Probability (CCDF)
?16
0
?4
?8
?12
G
ps
, POWER GAIN (dB)
940
920
900
880
860
840
820
16
17
18
19
20
21
22
34
32
30
?0.5
?1
?1.5
?2
η
D
, DRAIN
EFFICIENCY (%)
PARC (dB)
IRL, INPUT RETURN LOSS (dB)
ηD
960
14
22
800
?4
46
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 95 Watts Avg.
VDD
= 28 Vdc, P
out
= 95 W (Avg.), I
DQ
= 1400 mA
Single?Carrier W?CDMA, 3.84 MHz Channel Bandwidth
Input PAR = 7.5 dB @ 0.01% Probability (CCDF)
?15
0
?5
?10
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
15
820 840 860 880 900 920 940
44
42
40
?2
?2.5
?3
?3.5
400
17
23
1
1750 mA
IDQ
= 2100 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
VDD
= 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
G
ps
, POWER GAIN (dB)
1400 mA
700 mA
1050 mA
10 100
18
19
20
21
22
400
?60
0
1
1050 mA
IDQ
= 700 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
VDD
= 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
2100 mA
1750 mA
10 100
?10
?20
?30
?40
?50
1400 mA
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